634646
Magnesium oxide
(single crystal substrate), ≥99.9% trace metals basis, <100>, L × W × thickness 10 mm × 10 mm × 0.5 mm
Manufacturer: Sigma Aldrich
CAS Number: 1309-48-4
Select a Size
| Pack Size | SKU | Availability | Price |
|---|---|---|---|
| 1 EA | 634646-1-EA | In Stock | ₹ 9,020.25 |
634646 - 1 EA
In Stock
Quantity
1
Base Price: ₹ 9,020.25
GST (18%): ₹ 1,623.645
Total Price: ₹ 10,643.895
description
single side polished
Quality Level
100
Assay
≥99.9% trace metals basis
form
(single crystal substrate)
dielectric constant
9.8
reaction suitability
reagent type: catalystcore: magnesium
L × W × thickness
10 mm × 10 mm × 0.5 mm
transmittance
200-400 nm, 90%500-1000 nm, 98%
mp
2852 °C (lit.)
semiconductor properties
<100>
Other Options
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Description
- Features and Benefits: Magnesium oxide is an excellent single-crystal substrate for thin films of ferromagnetic, photo-electronic, and high Tc superconductor materials.
- Physical properties: Thermal expansion: 12.8 x 10-6/°C
- Physical form: cubic (a = 4.216 Å)
SAFETY INFORMATION
WGK
WGK 1
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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description: single side polished
Quality Level: 100
Assay: ≥99.9% trace metals basis
form: (single crystal substrate)
dielectric constant: 9.8
reaction suitability: reagent type: catalystcore: magnesium
L × W × thickness: 10 mm × 10 mm × 0.5 mm
transmittance: 200-400 nm, 90%500-1000 nm, 98%
mp: 2852 °C (lit.)
semiconductor properties: <100>
description:
single side polished
Quality Level:
100
Assay:
≥99.9% trace metals basis
form:
(single crystal substrate)
dielectric constant:
9.8
reaction suitability:
reagent type: catalystcore: magnesium
L × W × thickness:
10 mm × 10 mm × 0.5 mm
transmittance:
200-400 nm, 90%500-1000 nm, 98%
mp:
2852 °C (lit.)
semiconductor properties:
<100>
description: __
Quality Level: 100
Assay: __
form: crystalline (cubic (a=3.905 Å))
dielectric constant: ~300
reaction suitability: reagent type: catalystcore: titanium
L × W × thickness: __
transmittance: __
mp: 2060 °C (lit.)2080 °C
semiconductor properties: <100>
description:
__
Quality Level:
100
Assay:
__
form:
crystalline (cubic (a=3.905 Å))
dielectric constant:
~300
reaction suitability:
reagent type: catalystcore: titanium
L × W × thickness:
__
transmittance:
__
mp:
2060 °C (lit.)2080 °C
semiconductor properties:
<100>
description: __
Quality Level: 100
Assay: __
form: crystalline (cubic (a=3.905 Å))
dielectric constant: ~300
reaction suitability: reagent type: catalystcore: titanium
L × W × thickness: __
transmittance: __
mp: 2060 °C (lit.)2080 °C
semiconductor properties: <100>
description:
__
Quality Level:
100
Assay:
__
form:
crystalline (cubic (a=3.905 Å))
dielectric constant:
~300
reaction suitability:
reagent type: catalystcore: titanium
L × W × thickness:
__
transmittance:
__
mp:
2060 °C (lit.)2080 °C
semiconductor properties:
<100>
description: __
Quality Level: __
Assay: __
form: __
dielectric constant: __
reaction suitability: __
L × W × thickness: __
transmittance: __
mp: __
semiconductor properties: __
description:
__
Quality Level:
__
Assay:
__
form:
__
dielectric constant:
__
reaction suitability:
__
L × W × thickness:
__
transmittance:
__
mp:
__
semiconductor properties:
__