634646
Magnesium oxide
(single crystal substrate), ≥99.9% trace metals basis, <100>, L × W × thickness 10 mm × 10 mm × 0.5 mm
Manufacturer: Sigma Aldrich
CAS Number: 1309-48-4
Select a Size
| Pack Size | SKU | Availability | Price |
|---|---|---|---|
| 1 EA | 634646-1-EA | In Stock | ₹ 9,020.25 |
634646 - 1 EA
In Stock
Quantity
1
Base Price: ₹ 9,020.25
GST (18%): ₹ 1,623.645
Total Price: ₹ 10,643.895
description
single side polished
Quality Level
100
Assay
≥99.9% trace metals basis
form
(single crystal substrate)
dielectric constant
9.8
reaction suitability
reagent type: catalystcore: magnesium
L × W × thickness
10 mm × 10 mm × 0.5 mm
transmittance
200-400 nm, 90%500-1000 nm, 98%
mp
2852 °C (lit.)
semiconductor properties
<100>
Other Options
| Image | Product Name | Manufacturer | Price Range | |
|---|---|---|---|---|
 | Magnesium oxide | Supelco | ₹ 17,520.00 - ₹ 28,03,270.00 | |
| | Magnesium oxide | Supelco | ₹ 19,270.00 - ₹ 30,83,600.00 | |
 | Magnesium oxide | Sigma Aldrich | ₹ 6,140.00 - ₹ 32,272.45 | |
| | Magnesium oxide | Sigma Aldrich | ₹ 8,007.45 | |
| | Magnesium oxide | Sigma Aldrich | ₹ 3,829.65 - ₹ 6,055.70 | |
 | Magnesium oxide | SAFC | ₹ 31,406.30 - ₹ 2,24,850.04 | |
| | Magnesium oxide | Sigma Aldrich | ₹ 6,182.30 | |
| | Magnesium oxide | Sigma Aldrich | ₹ 13,419.60 | |
 | Magnesium oxide | SAFC | ₹ 18,119.63 - ₹ 1,65,315.34 | |
 | Magnesium oxide | Sigma Aldrich | ₹ 12,765.50 - ₹ 29,561.10 |
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Description
- Features and Benefits: Magnesium oxide is an excellent single-crystal substrate for thin films of ferromagnetic, photo-electronic, and high Tc superconductor materials.
- Physical properties: Thermal expansion: 12.8 x 10-6/°C
- Physical form: cubic (a = 4.216 Å)
SAFETY INFORMATION
WGK
WGK 1
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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description: single side polished
Quality Level: 100
Assay: ≥99.9% trace metals basis
form: (single crystal substrate)
dielectric constant: 9.8
reaction suitability: reagent type: catalystcore: magnesium
L × W × thickness: 10 mm × 10 mm × 0.5 mm
transmittance: 200-400 nm, 90%500-1000 nm, 98%
mp: 2852 °C (lit.)
semiconductor properties: <100>
description:
single side polished
Quality Level:
100
Assay:
≥99.9% trace metals basis
form:
(single crystal substrate)
dielectric constant:
9.8
reaction suitability:
reagent type: catalystcore: magnesium
L × W × thickness:
10 mm × 10 mm × 0.5 mm
transmittance:
200-400 nm, 90%500-1000 nm, 98%
mp:
2852 °C (lit.)
semiconductor properties:
<100>
description: __
Quality Level: 100
Assay: __
form: crystalline (cubic (a=3.905 Å))
dielectric constant: ~300
reaction suitability: reagent type: catalystcore: titanium
L × W × thickness: __
transmittance: __
mp: 2060 °C (lit.)2080 °C
semiconductor properties: <100>
description:
__
Quality Level:
100
Assay:
__
form:
crystalline (cubic (a=3.905 Å))
dielectric constant:
~300
reaction suitability:
reagent type: catalystcore: titanium
L × W × thickness:
__
transmittance:
__
mp:
2060 °C (lit.)2080 °C
semiconductor properties:
<100>
description: __
Quality Level: 100
Assay: 99.99% trace metals basis
form: solid
dielectric constant: __
reaction suitability: __
L × W × thickness: 10 mm × 10 mm × 0.5 mm
transmittance: __
mp: 1610 °C (lit.)
semiconductor properties: __
description:
__
Quality Level:
100
Assay:
99.99% trace metals basis
form:
solid
dielectric constant:
__
reaction suitability:
__
L × W × thickness:
10 mm × 10 mm × 0.5 mm
transmittance:
__
mp:
1610 °C (lit.)
semiconductor properties:
__
description: Crystallographic D spacing ((0001) - c plane: 2.165 Angstrom)Crystallographic D spacing ((1011) - s plane: 1.961 Angstrom)Crystallographic D spacing ((1040) - m plane: 1.375 Angstrom)Crystallographic D spacing ((1102) - r plane: 1.740 Angstrom)Crystallographic D spacing ((1120) - a plane: 2.379 Angstrom)Crystallographic D spacing ((1123) - n plane: 1.147 Angstrom)single side polished
Quality Level: 100
Assay: __
form: single crystal substrate
dielectric constant: __
reaction suitability: __
L × W × thickness: 10 mm × 10 mm × 0.5 mm
transmittance: __
mp: 2040 °C (lit.)
semiconductor properties: <0001>
description:
Crystallographic D spacing ((0001) - c plane: 2.165 Angstrom)Crystallographic D spacing ((1011) - s plane: 1.961 Angstrom)Crystallographic D spacing ((1040) - m plane: 1.375 Angstrom)Crystallographic D spacing ((1102) - r plane: 1.740 Angstrom)Crystallographic D spacing ((1120) - a plane: 2.379 Angstrom)Crystallographic D spacing ((1123) - n plane: 1.147 Angstrom)single side polished
Quality Level:
100
Assay:
__
form:
single crystal substrate
dielectric constant:
__
reaction suitability:
__
L × W × thickness:
10 mm × 10 mm × 0.5 mm
transmittance:
__
mp:
2040 °C (lit.)
semiconductor properties:
<0001>