920096
R2R Monolayer small grain CVD graphene on copper foil
A5 size
Manufacturer: Sigma Aldrich
CAS Number: 1034343-98-0
Synonym(S): Roll-to-Roll graphene
Select a Size
| Pack Size | SKU | Availability | Price |
|---|---|---|---|
| 1 EACH | 920096-1-EACH | In Stock | ₹ 93,506.35 |
920096 - 1 EACH
In Stock
Quantity
1
Base Price: ₹ 93,506.35
GST (18%): ₹ 16,831.143
Total Price: ₹ 1,10,337.493
Quality Level
100
description
Growth method: roll-to-roll CVD Number of layer: MonolayerRaman intensity 2D/G: ≥1.5
sheet resistance
240 Ω/sq ±10%
size
5 μm × 5 μm ± 10% , grain size
thickness
35 μm , Cu Foil
surface coverage
surface coverage >98%
transmittance
>97%
semiconductor properties
(mobility>1500 cm2/V·s) (Hall effect measurements)
Other Options
| Image | Product Name | Manufacturer | Price Range | |
|---|---|---|---|---|
 | Graphene | Sigma Aldrich | ₹ 42,030.00 | |
| | Single-layer graphene sheets for battery | Sigma Aldrich | ₹ 56,710.00 | |
| | Graphene nanoribbon | Sigma Aldrich | ₹ 38,158.13 | |
| | Graphene nanoribbon | Sigma Aldrich | ₹ 20,260.00 | |
| | R2R Monolayer large grain CVD graphene on silicon wafer | Sigma Aldrich | ₹ 70,936.23 | |
| | R2R Monolayer large grain CVD graphene on copper foil | Sigma Aldrich | ₹ 94,697.10 | |
| | R2R Monolayer large grain CVD graphene on silicon wafer | Sigma Aldrich | ₹ 94,697.10 | |
| | R2R Monolayer large grain CVD graphene on copper foil | Sigma Aldrich | ₹ 3,18,146.75 | |
| | R2R Monolayer small grain CVD graphene on copper foil | Sigma Aldrich | ₹ 3,19,218.43 |
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Description
- General description: Roll-to-roll, high-quality, monolayer CVD graphene with small grain size (~5μm2) on copper foil, A3 size.
- Application: Our Roll-to-Roll CVD graphene products are true monolayer high quality graphene, fabricated inside a Cleanroom, heavily monitored and QC to assure high reproducibility.The roll-to-roll process allows continuous, large scale graphene production[1]. This small grain size product with low sheet resistance would enable unmatched reproducibility and allow high performance for CVD graphene based cell culture scaffold[2], biosensors[3] and chemically gated sensors.
- Caution: Be cautious not to dropKeep away from contamination, heat, dust and flame etc.
- Storage and Stability: Avoid direct sun light, avoid high temperature, avoid high humidity, and avoid dust.
- Legal Information: Product of LG Electronics, R&D use only
SAFETY INFORMATION
Pictograms
Signal Word
Warning
Hazard Statements
Precautionary Statements
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 1
WGK
WGK 2
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Quality Level: 100
description: Growth method: roll-to-roll CVD Number of layer: MonolayerRaman intensity 2D/G: ≥1.5
sheet resistance: 240 Ω/sq ±10%
size: 5 μm × 5 μm ± 10% , grain size
thickness: 35 μm , Cu Foil
surface coverage: surface coverage >98%
transmittance: >97%
semiconductor properties: (mobility>1500 cm2/V·s) (Hall effect measurements)
Quality Level:
100
description:
Growth method: roll-to-roll CVD Number of layer: MonolayerRaman intensity 2D/G: ≥1.5
sheet resistance:
240 Ω/sq ±10%
size:
5 μm × 5 μm ± 10% , grain size
thickness:
35 μm , Cu Foil
surface coverage:
surface coverage >98%
transmittance:
>97%
semiconductor properties:
(mobility>1500 cm2/V·s) (Hall effect measurements)
Quality Level: 100
description: Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
sheet resistance: 240 Ω/sq ±10%
size: 5 μm × 5 μm ± 10%, grain size
thickness: __
surface coverage: surface coverage >98%
transmittance: >97%
semiconductor properties: (mobility>1500 cm2/V·s) (Hall effect measurements)
Quality Level:
100
description:
Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
sheet resistance:
240 Ω/sq ±10%
size:
5 μm × 5 μm ± 10%, grain size
thickness:
__
surface coverage:
surface coverage >98%
transmittance:
>97%
semiconductor properties:
(mobility>1500 cm2/V·s) (Hall effect measurements)
Quality Level: 100
description: Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
sheet resistance: 280 Ω/sq ±10%
size: 110 μm × 110 μm ± 10% , grain size
thickness: __
surface coverage: surface coverage >98%
transmittance: >97%
semiconductor properties: (mobility>3000 cm2/V·s) (Hall effect measurements)
Quality Level:
100
description:
Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
sheet resistance:
280 Ω/sq ±10%
size:
110 μm × 110 μm ± 10% , grain size
thickness:
__
surface coverage:
surface coverage >98%
transmittance:
>97%
semiconductor properties:
(mobility>3000 cm2/V·s) (Hall effect measurements)
Quality Level: 100
description: Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
sheet resistance: 280 Ω/sq ±10%
size: 110 μm × 110 μm ± 10%, grain size
thickness: __
surface coverage: surface coverage >98%
transmittance: >97%
semiconductor properties: (mobility>3000 cm2/V·s) (Hall effect measurements)
Quality Level:
100
description:
Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
sheet resistance:
280 Ω/sq ±10%
size:
110 μm × 110 μm ± 10%, grain size
thickness:
__
surface coverage:
surface coverage >98%
transmittance:
>97%
semiconductor properties:
(mobility>3000 cm2/V·s) (Hall effect measurements)