455199
Tetrakis(dimethylamido)hafnium(IV)
≥99.99%
Manufacturer: Sigma Aldrich
CAS Number: 19782-68-4
Synonym(S): TDMAH, Tetrakis(dimethylamino)hafnium(IV)
Select a Size
| Pack Size | SKU | Availability | Price |
|---|---|---|---|
| 25 G | 455199-25-G | In Stock | ₹ 94,891.95 |
455199 - 25 G
In Stock
Quantity
1
Base Price: ₹ 94,891.95
GST (18%): ₹ 17,080.551
Total Price: ₹ 1,11,972.501
Quality Level
100
Assay
≥99.99%
form
low-melting solid
reaction suitability
core: hafnium
mp
26-29 °C (lit.)
density
1.098 g/mL at 25 °C
SMILES string
CN(C)[Hf](N(C)C)(N(C)C)N(C)C
InChI
1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4
InChI key
ZYLGGWPMIDHSEZ-UHFFFAOYSA-N
Other Options
| Image | Product Name | Manufacturer | Price Range | |
|---|---|---|---|---|
 | Strem, An Ascensus Company CAS# 19782-68-4. 1g. Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH, PURATREM. MFCD01862473 | Strem, An Ascensus Company | ₹ 13,963.39 | |
 | Tetrakis(dimethylamido)hafnium(IV) | Sigma Aldrich | ₹ 1,40,876.55 | |
 | Methanamine, N-methyl-, hafnium(4+) salt (4:1) | Aaron Chemicals LLC | -- | |
 | 19782-68-4 | Methanamine, N-methyl-, hafnium(4+) salt (4:1) | A2B Chem | ₹ 15,315.24 - ₹ 99,249.60 |
Related Products
Description
- General description: Tetrakis(dimethylamido)hafnium(IV) is an organometallic compound consisting of a central hafnium atom (Hf) surrounded by four dimethylamido ligands (NMe2). It is commonly used as a CVD/ALD precursor to produce high-quality Hf thin films. It is a solid with low melting point.
- Application: Tetrakis(dimethylamido)hafnium(IV) can be used:As an atomic layer deposition(ALD) precursor for deposition of hafnium oxide thin films for advanced semiconductor devices.[1]As a precursor to fabricate polymer-derived ceramic nanocomposites.[2]To prepare HfO2, CeO2, and Ce-doped HfO2 thin films on Ge substrates by using tris(isopropyl-cyclopentadienyl)cerium [Ce(iPrCp)3] precursors with H2O via ALD method.[3]To produce Hf3N4 thin films with TDMAH and ammonia at low substrate temperatures at 150−250 °C.[4]
- Analysis Note: Purity excludes ~2000 ppm Zr.
SAFETY INFORMATION
Pictograms
Signal Word
Danger
Hazard Statements
Precautionary Statements
P210 - P231 + P232 - P280 - P305 + P351 + P338 - P310 - P422
Hazard Classifications
Flam. Sol. 1 - Skin Corr. 1B - Water-react 2
Supplementary Hazards
EUH014
WGK
WGK 3
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Compare Similar Items
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Quality Level: 100
Assay: ≥99.99%
form: low-melting solid
reaction suitability: core: hafnium
mp: 26-29 °C (lit.)
density: 1.098 g/mL at 25 °C
SMILES string: CN(C)[Hf](N(C)C)(N(C)C)N(C)C
InChI: 1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4
InChI key: ZYLGGWPMIDHSEZ-UHFFFAOYSA-N
Quality Level:
100
Assay:
≥99.99%
form:
low-melting solid
reaction suitability:
core: hafnium
mp:
26-29 °C (lit.)
density:
1.098 g/mL at 25 °C
SMILES string:
CN(C)[Hf](N(C)C)(N(C)C)N(C)C
InChI:
1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4
InChI key:
ZYLGGWPMIDHSEZ-UHFFFAOYSA-N
Quality Level: 100
Assay: 99.99%
form: liquid
reaction suitability: core: hafnium
mp: __
density: 1.249 g/mL at 25 °C (lit.)
SMILES string: CCN(CC)[Hf](N(CC)CC)(N(CC)CC)N(CC)CC
InChI: 1S/4C4H10N.Hf/c4*1-3-5-4-2;/h4*3-4H2,1-2H3;/q4*-1;+4
InChI key: VBCSQFQVDXIOJL-UHFFFAOYSA-N
Quality Level:
100
Assay:
99.99%
form:
liquid
reaction suitability:
core: hafnium
mp:
__
density:
1.249 g/mL at 25 °C (lit.)
SMILES string:
CCN(CC)[Hf](N(CC)CC)(N(CC)CC)N(CC)CC
InChI:
1S/4C4H10N.Hf/c4*1-3-5-4-2;/h4*3-4H2,1-2H3;/q4*-1;+4
InChI key:
VBCSQFQVDXIOJL-UHFFFAOYSA-N
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