Tetrakis(ethylmethylamido)hafnium(IV)
≥99.99% trace metals basis
Manufacturer: Sigma Aldrich
CAS Number: 352535-01-4
Synonym(S): TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)
Select a Size
| Pack Size | SKU | Availability | Price |
|---|---|---|---|
| 5 ML | 553123-5-ML | In Stock | ₹ 32,886.35 |
| 25 ML | 553123-25-ML | In Stock | ₹ 89,035.63 |
553123 - 5 ML
In Stock
Quantity
1
Base Price: ₹ 32,886.35
GST (18%): ₹ 5,919.543
Total Price: ₹ 38,805.893
Quality Level
200
Assay
≥99.99% trace metals basis
form
liquid
reaction suitability
core: hafnium
impurities
Purity excludes ~2000 ppm Zirconium
bp
78 °C/0.01 mmHg (lit.)
mp
<-50 °C
density
1.324 g/mL at 25 °C (lit.)
SMILES string
CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC
InChI
1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
Other Options
Related Products
Description
- General description: Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid that is sensitive to water and air. It freezes at -50 °C and boilsaround 78 °C at 0.1 Torr.
- Application: TEMAH is used as a precursor for atomic layer deposition (ALD)of hafnium oxide (HfO2) thin films. Because HfO2 has a high dielectric constant of 16-25, it is commonly used as a dielectric film in semiconductor fabrication. TEMAH is ideal for ALD because of its low boiling point and its reactivity with water and ozone. Most importantly, its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), and Si(100).[1] Researchers have also used it to deposit thin films ofHfO2 on 2D materials, like MoS2.[2][2] TEMAH is also useful precursor in the synthesis of ferroelectric hafnium zirconium oxide and Hf1-xZrxO2 thin films on MoS2 phototransistors.[3] Researchers have also deposited thin films of hafnium nitride (Hf3N4) by ALD alternatively pulsing TEMAH and ammonia.[4]
- Features and Benefits: Thermally stable.It has sufficient volatility and is suitable for use in vapor deposition.Completely self-limiting surface reactions.
SAFETY INFORMATION
Pictograms
Signal Word
Danger
Hazard Statements
Precautionary Statements
P210 - P231 + P232 - P280 - P301 + P312 - P303 + P361 + P353 - P305 + P351 + P338
Hazard Classifications
Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1
Target Organs
Respiratory system
Supplementary Hazards
EUH014
WGK
WGK 3
Flash Point(F)
closed cup
Flash Point(C)
closed cup
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Compare Similar Items
Show Difference
Quality Level: 200
Assay: ≥99.99% trace metals basis
form: liquid
reaction suitability: core: hafnium
impurities: Purity excludes ~2000 ppm Zirconium
bp: 78 °C/0.01 mmHg (lit.)
mp: <-50 °C
density: 1.324 g/mL at 25 °C (lit.)
SMILES string: CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC
InChI: 1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
Quality Level: 200
Assay: ≥99.99% trace metals basis
form: liquid
reaction suitability: core: zirconium
impurities: __
bp: 81 °C/0.1 mmHg (lit.)
mp: __
density: 1.049 g/mL at 25 °C (lit.)
SMILES string: CCN(C)[Zr](N(C)CC)(N(C)CC)N(C)CC
InChI: 1S/4C3H8N.Zr/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
Quality Level: 100
Assay: __
form: __
reaction suitability: __
impurities: __
bp: __
mp: __
density: 1.11 g/mL at 20 °C
SMILES string: __
InChI: 1S/C6H9N2.C6H9NO.ClH/c1-3-8-5-4-7(2)6-8;1-2-7-5-3-4-6(7)8;/h3-6H,1H2,2H3;2H,1,3-5H2;1H/q+1;;/p-1