Aluminum oxide
single crystal substrate, <0001>
Manufacturer: Sigma Aldrich
CAS Number: 1344-28-1
Synonym(S): Sapphire, Alumina
Select a Size
| Pack Size | SKU | Availability | Price |
|---|---|---|---|
| 1 EA | 634875-1-EA | In Stock | ₹ 11,485.33 |
| 5 EA | 634875-5-EA | In Stock | ₹ 32,442.53 |
634875 - 1 EA
In Stock
Quantity
1
Base Price: ₹ 11,485.33
GST (18%): ₹ 2,067.359
Total Price: ₹ 13,552.689
description
Crystallographic D spacing ((0001) - c plane: 2.165 Angstrom)Crystallographic D spacing ((1011) - s plane: 1.961 Angstrom)Crystallographic D spacing ((1040) - m plane: 1.375 Angstrom)Crystallographic D spacing ((1102) - r plane: 1.740 Angstrom)Crystallographic D spacing ((1120) - a plane: 2.379 Angstrom)Crystallographic D spacing ((1123) - n plane: 1.147 Angstrom)single side polished
Quality Level
100
form
single crystal substrate
hardness
9 mohs
L × W × thickness
10 mm × 10 mm × 0.5 mm
mp
2040 °C (lit.)
semiconductor properties
<0001>
SMILES string
O=[Al]O[Al]=O
InChI
1S/2Al.3O
InChI key
TWNQGVIAIRXVLR-UHFFFAOYSA-N
Other Options
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Description
- Features and Benefits: Common substrate for III-V nitrides as well as many other epitaxial films.
- Physical properties: thermal expansion = 7.5 × 10-6 /°C; specific heat = 0.10 cal/°C; thermal conductivity = 46.06 @ 0 °C, 25.12 @ 100 °C, 12.56 @ 400 °C (W/m,K); dielectric constant = ~9.4 @ 300 K at A axis, ~11.58 @ C axis; loss tangent at 10 GHz < 2 × 10-5 at A axis, 5 × 10-6 at C axis
- Physical form: Crystalline, hexagonal (a = 4.758 Å, c = 12.992)
SAFETY INFORMATION
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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description: Crystallographic D spacing ((0001) - c plane: 2.165 Angstrom)Crystallographic D spacing ((1011) - s plane: 1.961 Angstrom)Crystallographic D spacing ((1040) - m plane: 1.375 Angstrom)Crystallographic D spacing ((1102) - r plane: 1.740 Angstrom)Crystallographic D spacing ((1120) - a plane: 2.379 Angstrom)Crystallographic D spacing ((1123) - n plane: 1.147 Angstrom)single side polished
Quality Level: 100
form: single crystal substrate
hardness: 9 mohs
L × W × thickness: 10 mm × 10 mm × 0.5 mm
mp: 2040 °C (lit.)
semiconductor properties: <0001>
SMILES string: O=[Al]O[Al]=O
InChI: 1S/2Al.3O
InChI key: TWNQGVIAIRXVLR-UHFFFAOYSA-N
description: __
Quality Level: __
form: __
hardness: __
L × W × thickness: __
mp: __
semiconductor properties: __
SMILES string: __
InChI: __
InChI key: __
description: __
Quality Level: 100
form: __
hardness: __
L × W × thickness: __
mp: __
semiconductor properties: __
SMILES string: Cl.Cl.Cl.CN1CCN(CC1)c2ccc3nc([nH]c3c2)-c4ccc5nc([nH]c5c4)-c6ccc(cc6)N(C)C
InChI: 1S/C27H29N7.3ClH/c1-32(2)20-7-4-18(5-8-20)26-28-22-10-6-19(16-24(22)30-26)27-29-23-11-9-21(17-25(23)31-27)34-14-12-33(3)13-15-34;;;/h4-11,16-17H,12-15H2,1-3H3,(H,28,30)(H,29,31);3*1H
InChI key: IPMZLKUUQSFUTA-UHFFFAOYSA-N