920118
R2R Monolayer small grain CVD graphene on silicon wafer
4 in diameter, avg. no. of layers, 1
Manufacturer: Sigma Aldrich
Synonym(S): Roll-to-Roll graphene
Select a Size
| Pack Size | SKU | Availability | Price |
|---|---|---|---|
| 1 EACH | 920118-1-EACH | In Stock | ₹ 68,359.88 |
920118 - 1 EACH
In Stock
Quantity
1
Base Price: ₹ 68,359.88
GST (18%): ₹ 12,304.778
Total Price: ₹ 80,664.658
Quality Level
100
description
Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
feature
avg. no. of layers 1
sheet resistance
240 Ω/sq ±10%
size
5 μm × 5 μm ± 10%, grain size
surface coverage
surface coverage >98%
transmittance
>97%
semiconductor properties
(mobility>1500 cm2/V·s) (Hall effect measurements)
Related Products
Description
- General description: Be cautious not to dropKeep away from contamination, heat, dust and flame etc.
- Application: Our Roll-to-Roll CVD graphene products are true monolayer high quality graphene, fabricated inside a Cleanroom, heavily monitored and QC to assure high reproducibility.The roll-to-roll process allows continuous, large scale graphene production[1]. This small grain size product is made by transferring roll-to-roll CVD graphene onto silicon wafer. It is ready-to-use with low sheet resistance, and would enable unmatched reproducibility and allow high performance for CVD graphene based cell culture scaffold[2], biosensors[3] and chemically gated sensors.
- Storage and Stability: Avoid direct sun light, avoid high temperature, avoid high humidity, and avoid dust.
- Legal Information: Product of LG Electronics, R&D use only
SAFETY INFORMATION
WGK
WGK 3
Compare Similar Items
Show Difference
Quality Level: 100
description: Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
feature: avg. no. of layers 1
sheet resistance: 240 Ω/sq ±10%
size: 5 μm × 5 μm ± 10%, grain size
surface coverage: surface coverage >98%
transmittance: >97%
semiconductor properties: (mobility>1500 cm2/V·s) (Hall effect measurements)
Quality Level:
100
description:
Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
feature:
avg. no. of layers 1
sheet resistance:
240 Ω/sq ±10%
size:
5 μm × 5 μm ± 10%, grain size
surface coverage:
surface coverage >98%
transmittance:
>97%
semiconductor properties:
(mobility>1500 cm2/V·s) (Hall effect measurements)
Quality Level: 100
description: Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
feature: avg. no. of layers 1
sheet resistance: 280 Ω/sq ±10%
size: 110 μm × 110 μm ± 10% , grain size
surface coverage: surface coverage >98%
transmittance: >97%
semiconductor properties: (mobility>3000 cm2/V·s) (Hall effect measurements)
Quality Level:
100
description:
Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
feature:
avg. no. of layers 1
sheet resistance:
280 Ω/sq ±10%
size:
110 μm × 110 μm ± 10% , grain size
surface coverage:
surface coverage >98%
transmittance:
>97%
semiconductor properties:
(mobility>3000 cm2/V·s) (Hall effect measurements)
Quality Level: 100
description: Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
feature: avg. no. of layers 1
sheet resistance: 280 Ω/sq ±10%
size: 110 μm × 110 μm ± 10%, grain size
surface coverage: surface coverage >98%
transmittance: >97%
semiconductor properties: (mobility>3000 cm2/V·s) (Hall effect measurements)
Quality Level:
100
description:
Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5
feature:
avg. no. of layers 1
sheet resistance:
280 Ω/sq ±10%
size:
110 μm × 110 μm ± 10%, grain size
surface coverage:
surface coverage >98%
transmittance:
>97%
semiconductor properties:
(mobility>3000 cm2/V·s) (Hall effect measurements)
Quality Level: 100
description: __
feature: __
sheet resistance: __
size: __
surface coverage: __
transmittance: __
semiconductor properties: __
Quality Level:
100
description:
__
feature:
__
sheet resistance:
__
size:
__
surface coverage:
__
transmittance:
__
semiconductor properties:
__