920134

R2R Monolayer large grain CVD graphene on silicon wafer

6 in diameter, avg. no. of layers, 1

Manufacturer: Sigma Aldrich

CAS Number: 1034343-98-0

Synonym(S): Roll-to-Roll graphene

Select a Size

Pack Size SKU Availability Price
1 EACH 920134-1-EACH In Stock ₹ 94,697.10

920134 - 1 EACH

₹ 94,697.10

In Stock

Quantity

1

Base Price: ₹ 94,697.10

GST (18%): ₹ 17,045.478

Total Price: ₹ 1,11,742.578

Quality Level

100

description

Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5

feature

avg. no. of layers 1

sheet resistance

280 Ω/sq ±10%

size

110 μm × 110 μm ± 10%, grain size

surface coverage

surface coverage >98%

transmittance

>97%

semiconductor properties

(mobility>3000 cm2/V·s) (Hall effect measurements)

Other Options

Image Product Name Manufacturer Price Range
900561
Graphene
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924458
Single-layer graphene sheets for battery
Sigma Aldrich ₹ 56,710.00
922676
Graphene nanoribbon
Sigma Aldrich ₹ 38,158.13
922714
Graphene nanoribbon
Sigma Aldrich ₹ 20,260.00
920096
R2R Monolayer small grain CVD graphene on copper foil
Sigma Aldrich ₹ 93,506.35
920126
R2R Monolayer large grain CVD graphene on silicon wafer
Sigma Aldrich ₹ 70,936.23
920088
R2R Monolayer large grain CVD graphene on copper foil
Sigma Aldrich ₹ 94,697.10
920053
R2R Monolayer large grain CVD graphene on copper foil
Sigma Aldrich ₹ 3,18,146.75
920061
R2R Monolayer small grain CVD graphene on copper foil
Sigma Aldrich ₹ 3,19,218.43

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Description

  • General description: Roll-to-roll, high-quality, monolayer CVD graphene with large grain size (~110μm^2) on 6 inch silicon wafer.
  • Application: Our Roll-to-Roll CVD graphene products are true monolayer high quality graphene, fabricated inside a Cleanroom, heavily monitored and QC to assure high reproducibility.The roll-to-roll process allows continuous, large scale graphene production[1]. This large grain size graphene product on silicon wafer is ready to use, helps you minimize process time, and increase success rate. This product with low sheet resistance would enable unmatched reproducibility and allow high performance for CVD graphene based FET[2], CVD graphene based sensors, and heterostructure based micro/nano electronics[3].Application examples:Ultrafast TransistorOptical devicesBio/Gas SensorTransparent ElectrodeFlexible DisplaySmart CoatingThermal management
  • Caution: Be cautious not to dropKeep away from contamination, heat, dust and flame etc.
  • Storage and Stability: Avoid direct sun light, avoid high temperature, avoid high humidity, and avoid dust.
  • Legal Information: Product of LG Electronics, R&D use only

SAFETY INFORMATION

WGK

WGK 3

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Quality Level:
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description:
Growth method: roll-to-roll CVD Wafer: SiO2 (300nm) SiNumber of layer: MonolayerRaman intensity 2D/G: ≥1.5

feature:
avg. no. of layers 1

sheet resistance:
280 Ω/sq ±10%

size:
110 μm × 110 μm ± 10%, grain size

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>97%

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(mobility>3000 cm2/V·s) (Hall effect measurements)

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