920959
Monolayer Graphene on Si/SiO2 wafer
diam. 100 mm (4 in.)
Manufacturer: Sigma Aldrich
CAS Number: 7782-42-5
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| Pack Size | SKU | Availability | Price |
|---|---|---|---|
| 1 EACH | 920959-1-EACH | In Stock | ₹ 66,638.70 |
920959 - 1 EACH
In Stock
Quantity
1
Base Price: ₹ 66,638.70
GST (18%): ₹ 11,994.966
Total Price: ₹ 78,633.666
description
Graphene Coverage: 100% with sporadic adlayersMetal Impurities: 1.00e10 – 5.00e10 (at/cm) substrateMonolayer Graphene Transparency: >97%Raman D/G ratio: Indistinguishable to 0.03Substrate Type/Doping: P/B 430 Ω/sq ±50 Ω/sq
Quality Level
100
resistivity
1-10 Ω-cm
diam.
100 mm (4 in.)
grain size
>40 μm
semiconductor properties
(mobility>2700 cm2/V·s) (FET mobility)
InChI
1S/C
InChI key
OKTJSMMVPCPJKN-UHFFFAOYSA-N
Other Options
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Description
- General description: Each graphene unit sold is accompanied by a specification sheet unique to the S/N and contains batch-specific metrics. This eliminates guesswork and ensures that you only get the best, well-characterized, and QA-passed graphene.
- Application: Graphene is one of the most promising carbon nanomaterials, and it was first isolated in 2004 by Novoselov, Geim et al,[1] leading to a Nobel prize. It consists of a two-dimensional single layer of sp2 hybridized carbon with hexagonal lattice. It has attracted significant attention in the field of high-performance electronic devices because of its excellent electronic [2] and chemical properties, and large specific surface area [3] . Among the main potential applications of our monolayer graphene on Si/SiO2 wafers are transistors and sensors.
- Storage and Stability: To ensure the maximum shelf life of your graphene sample, especially if it rests on copper foil, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
- Other Notes: Organic Electronics
SAFETY INFORMATION
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
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description: Graphene Coverage: 100% with sporadic adlayersMetal Impurities: 1.00e10 – 5.00e10 (at/cm) substrateMonolayer Graphene Transparency: >97%Raman D/G ratio: Indistinguishable to 0.03Substrate Type/Doping: P/B 430 Ω/sq ±50 Ω/sq
Quality Level: 100
resistivity: 1-10 Ω-cm
diam.: 100 mm (4 in.)
grain size: >40 μm
semiconductor properties: (mobility>2700 cm2/V·s) (FET mobility)
InChI: 1S/C
InChI key: OKTJSMMVPCPJKN-UHFFFAOYSA-N
description:
Graphene Coverage: 100% with sporadic adlayersMetal Impurities: 1.00e10 – 5.00e10 (at/cm) substrateMonolayer Graphene Transparency: >97%Raman D/G ratio: Indistinguishable to 0.03Substrate Type/Doping: P/B 430 Ω/sq ±50 Ω/sq
Quality Level:
100
resistivity:
1-10 Ω-cm
diam.:
100 mm (4 in.)
grain size:
>40 μm
semiconductor properties:
(mobility>2700 cm2/V·s) (FET mobility)
InChI:
1S/C
InChI key:
OKTJSMMVPCPJKN-UHFFFAOYSA-N
description: Bandgap: 5.97 eVMonolayer h-BNRaman Peak: 1370 /cm-1h-BN Coverage: 100% with sporadic adlayers
Quality Level: 100
resistivity: __
diam.: __
grain size: >4 μm
semiconductor properties: __
InChI: 1S/BN/c1-2
InChI key: PZNSFCLAULLKQX-UHFFFAOYSA-N
description:
Bandgap: 5.97 eVMonolayer h-BNRaman Peak: 1370 /cm-1h-BN Coverage: 100% with sporadic adlayers
Quality Level:
100
resistivity:
__
diam.:
__
grain size:
>4 μm
semiconductor properties:
__
InChI:
1S/BN/c1-2
InChI key:
PZNSFCLAULLKQX-UHFFFAOYSA-N
description: suitable for 3D bioprinting applications
Quality Level: 100
resistivity: __
diam.: __
grain size: __
semiconductor properties: __
InChI: __
InChI key: __
description:
suitable for 3D bioprinting applications
Quality Level:
100
resistivity:
__
diam.:
__
grain size:
__
semiconductor properties:
__
InChI:
__
InChI key:
__
description: suitable for 3D bioprinting applications
Quality Level: 100
resistivity: __
diam.: __
grain size: __
semiconductor properties: __
InChI: __
InChI key: __
description:
suitable for 3D bioprinting applications
Quality Level:
100
resistivity:
__
diam.:
__
grain size:
__
semiconductor properties:
__
InChI:
__
InChI key:
__