920924
Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer
diam. 200 mm (8 in.)
Manufacturer: Sigma Aldrich
CAS Number: 10043-11-5
Synonym(S): Boronitrene, Hexagonal boron nitride monolayer, Single-layer hexagonal boron nitride, White graphene
Select a Size
| Pack Size | SKU | Availability | Price |
|---|---|---|---|
| 1 EACH | 920924-1-EACH | In Stock | ₹ 1,39,930.00 |
920924 - 1 EACH
In Stock
Quantity
1
Base Price: ₹ 1,39,930.00
GST (18%): ₹ 25,187.40
Total Price: ₹ 1,65,117.40
description
Bandgap: 5.97 eVMetal Impurities: 1.00e10 – 5.00e10 (at/cm2)Monolayer h-BNOrientation: <1-0-0>Raman Peak: 1370 /cm-1Substrate Type/Doping: P/BhBN Coverage: 100% with sporadic adlayers
Quality Level
100
resistivity
5-30 Ω-cm
diam.
200 mm (8 in.)
thickness
300 nm , Oxide725 ± 25 μm , Wafer
grain size
>4 μm
InChI
1S/BN/c1-2
InChI key
PZNSFCLAULLKQX-UHFFFAOYSA-N
Other Options
| Image | Product Name | Manufacturer | Price Range | |
|---|---|---|---|---|
 | Monolayer hexagonal Boron Nitride (hBN) on copper foil | Sigma Aldrich | ₹ 79,290.00 | |
 | Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer | Sigma Aldrich | ₹ 88,620.00 | |
| | Monolayer hexagonal Boron Nitride (hBN) on copper foil | Sigma Aldrich | ₹ 46,640.00 | |
| | Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer | Sigma Aldrich | ₹ 90,490.00 | |
| | Boron nitride | Sigma Aldrich | ₹ 9,049.70 - ₹ 35,170.43 | |
 | Boron nitride | Aaron Chemicals LLC | ₹ 256.68 - ₹ 2,652.36 | |
 | 10043-11-5 | Boron nitride | A2B Chem | ₹ 1,540.08 - ₹ 15,058.56 |
Related Products
Description
- Application: Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (~6 eV that can be tuned to ~2 eV) [1][2] with exceptional strength [3], large oxidation resistance at high temperatures [3], and optical functionalities [2][3]. Among its potential applications are:Two-dimensional electronics [1][2][3]Nanophotonic and other optoelectronic devices [1][2][3]Quantum communication and information science [2]Aerospace industry [4]MEMS and NEMS [5]Micro-/nano- actuators [3]nsulating/transparent coatings [1]
- Storage and Stability: To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
SAFETY INFORMATION
WGK
WGK 3
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description: Bandgap: 5.97 eVMetal Impurities: 1.00e10 – 5.00e10 (at/cm2)Monolayer h-BNOrientation: <1-0-0>Raman Peak: 1370 /cm-1Substrate Type/Doping: P/BhBN Coverage: 100% with sporadic adlayers
Quality Level: 100
resistivity: 5-30 Ω-cm
diam.: 200 mm (8 in.)
thickness: 300 nm , Oxide725 ± 25 μm , Wafer
grain size: >4 μm
InChI: 1S/BN/c1-2
InChI key: PZNSFCLAULLKQX-UHFFFAOYSA-N
description:
Bandgap: 5.97 eVMetal Impurities: 1.00e10 – 5.00e10 (at/cm2)Monolayer h-BNOrientation: <1-0-0>Raman Peak: 1370 /cm-1Substrate Type/Doping: P/BhBN Coverage: 100% with sporadic adlayers
Quality Level:
100
resistivity:
5-30 Ω-cm
diam.:
200 mm (8 in.)
thickness:
300 nm , Oxide725 ± 25 μm , Wafer
grain size:
>4 μm
InChI:
1S/BN/c1-2
InChI key:
PZNSFCLAULLKQX-UHFFFAOYSA-N
description: Monolayer h-BNhBN Coverage: 100% with sporadic adlayersBandgap: 5.97 eVRaman Peak: 1370 /cm-1Orientation: <1-0-0>Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)SubstrateType/Doping: P/BWafer Thickness : 500 ± 50 μmOxide Thickness: 300 nmResistivity: 1 – 10 (ohm/cm)
Quality Level: 100
resistivity: __
diam.: 100 mm (4 in.)
thickness: __
grain size: >4 μm
InChI: 1S/BN/c1-2
InChI key: PZNSFCLAULLKQX-UHFFFAOYSA-N
description:
Monolayer h-BNhBN Coverage: 100% with sporadic adlayersBandgap: 5.97 eVRaman Peak: 1370 /cm-1Orientation: <1-0-0>Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)SubstrateType/Doping: P/BWafer Thickness : 500 ± 50 μmOxide Thickness: 300 nmResistivity: 1 – 10 (ohm/cm)
Quality Level:
100
resistivity:
__
diam.:
100 mm (4 in.)
thickness:
__
grain size:
>4 μm
InChI:
1S/BN/c1-2
InChI key:
PZNSFCLAULLKQX-UHFFFAOYSA-N
description: Bandgap: 5.97 eVMetal Impurities: 1.00e10 – 5.00e10 (at/cm2)Orientation: <1-0-0>Raman Peak: 1370 /cm-1Substrate Type/Doping: P/BhBN Coverage: 100% with sporadic adlayers 1-25 Ω-cm
Quality Level: 100
resistivity: __
diam.: 150 mm (6 in.)
thickness: 675 ± 25 μm , Wafer
grain size: >4 μm
InChI: 1S/BN/c1-2
InChI key: PZNSFCLAULLKQX-UHFFFAOYSA-N
description:
Bandgap: 5.97 eVMetal Impurities: 1.00e10 – 5.00e10 (at/cm2)Orientation: <1-0-0>Raman Peak: 1370 /cm-1Substrate Type/Doping: P/BhBN Coverage: 100% with sporadic adlayers 1-25 Ω-cm
Quality Level:
100
resistivity:
__
diam.:
150 mm (6 in.)
thickness:
675 ± 25 μm , Wafer
grain size:
>4 μm
InChI:
1S/BN/c1-2
InChI key:
PZNSFCLAULLKQX-UHFFFAOYSA-N
description: Graphene Coverage: 100% with sporadic adlayersMetal Impurities: 1.00e10 – 5.00e10 (at/cm) substrateMonolayer Graphene Transparency: >97%Raman D/G ratio: Indistinguishable to 0.03Substrate Type/Doping: P/B 430 Ω/sq ±50 Ω/sq
Quality Level: 100
resistivity: 1-10 Ω-cm
diam.: 100 mm (4 in.)
thickness: __
grain size: >40 μm
InChI: 1S/C
InChI key: OKTJSMMVPCPJKN-UHFFFAOYSA-N
description:
Graphene Coverage: 100% with sporadic adlayersMetal Impurities: 1.00e10 – 5.00e10 (at/cm) substrateMonolayer Graphene Transparency: >97%Raman D/G ratio: Indistinguishable to 0.03Substrate Type/Doping: P/B 430 Ω/sq ±50 Ω/sq
Quality Level:
100
resistivity:
1-10 Ω-cm
diam.:
100 mm (4 in.)
thickness:
__
grain size:
>40 μm
InChI:
1S/C
InChI key:
OKTJSMMVPCPJKN-UHFFFAOYSA-N